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Next Generation Wireless Amplifier Technology: BiSTA (Bipolar Stacked Transistor Architecture)

Technology #11-007-farmer

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Bi-Polar Stacked Transistor Architecture
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Researchers
Thomas J. Farmer
The George Washington University, Department of Electrical and Computer Engineering, Washington, DC
Ali Darwish
The American University in Cairo, Department of Electronics Engineering, New Cairo, Egypt
Mona E. Zaghloul
The American University in Cairo, Department of Electronics Engineering, New Cairo, Egypt
Managed By
Jerry Comanescu
Licensing Associate jcomanescu@gwu.edu (202) 994-8975
Patent Protection

US Patent Pending

 A new design for an integrated circuit amplifier operating at very high frequencies. Current high frequency amplifiers use expensive III-V technologies (GaAs, InP). This invention uses commercial silicon technology.

Benefits of silicon technology are:

  • low cost of production
  • large & mature manufacturing base
  • high reliability
  • high integration, system-on-single-chip
  • solutions

Potential Market of this Invention:

Commercial low frequency applications include:

  • cellular phone systems
  • WiFi
  •  bluetooth amplifiers

Commercial high frequency applications include:

  • wireless-HDMI (blue-ray to TV interface)
  • airport security imaging scanners
  • medical imaging scanners
  • automotive radar
  • telecom long-haul back-end wireless communications (tower-to-back-office, tower-to-tower communication)
  • building-to-building wireless communications

Military Uses include:

  • satellite communications
  • compact radar systems
  • phased-array T/R systems

Has this Invention been tested?

  • Yes, results have been published in 2 peer reviewed scientific journals.
  • This design has been fabricated using IBM 8HP BiCMOS SiGe commercial technology.
  • Two prototype amplifiers have been built, extensively tested and measured to operate at frequencies of 2.4 GHz and 30 GHz.
  • 2.4 GHz measures: PSAT=18.55 dBm, PAE=32.0 %, VBIAS=3.23 V.
  • 30 GHz measures: PSAT=19.0 dBm , PAE=11.5 %, VBIAS=5.06 V.