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Next Generation Wireless Amplifier Technology: BiSTA (Bipolar Stacked Transistor Architecture)Technology #11-007-farmer
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- Thomas J. Farmer The George Washington University, Department of Electrical and Computer Engineering, Washington, DC
- Ali Darwish The American University in Cairo, Department of Electronics Engineering, New Cairo, Egypt
- Mona E. Zaghloul The American University in Cairo, Department of Electronics Engineering, New Cairo, Egypt
- Managed By
- Jerry Comanescu Licensing Associate firstname.lastname@example.org (202) 994-8975
- Patent Protection
- US Patent Pending
A new design for an integrated circuit amplifier operating at very high frequencies. Current high frequency amplifiers use expensive III-V technologies (GaAs, InP). This invention uses commercial silicon technology.
Benefits of silicon technology are:
- low cost of production
- large & mature manufacturing base
- high reliability
- high integration, system-on-single-chip
Potential Market of this Invention:
Commercial low frequency applications include:
- cellular phone systems
- bluetooth amplifiers
Commercial high frequency applications include:
- wireless-HDMI (blue-ray to TV interface)
- airport security imaging scanners
- medical imaging scanners
- automotive radar
- telecom long-haul back-end wireless communications (tower-to-back-office, tower-to-tower communication)
- building-to-building wireless communications
Military Uses include:
- satellite communications
- compact radar systems
- phased-array T/R systems
Has this Invention been tested?
- Yes, results have been published in 2 peer reviewed scientific journals.
- This design has been fabricated using IBM 8HP BiCMOS SiGe commercial technology.
- Two prototype amplifiers have been built, extensively tested and measured to operate at frequencies of 2.4 GHz and 30 GHz.
- 2.4 GHz measures: PSAT=18.55 dBm, PAE=32.0 %, VBIAS=3.23 V.
- 30 GHz measures: PSAT=19.0 dBm , PAE=11.5 %, VBIAS=5.06 V.